sct3160kl-ag凯发旗舰厅
n-channel sic（碳化硅）功率mosfet
sct3160kl
主要规格
特性：
drain-source voltage[v]
1200
drain-source on-state resistance(typ.)[mω]
160
generation
3rd gen (trench)
drain current[a]
17
total power dissipation[w]
103
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-55
storage temperature (max.)[°c]
175
package size [mm]
16x21 (t=5.2)
特点：
・ low on-resistance・ fast switching speed
・ fast reverse recovery
・ easy to parallel
・ simple to drive
・ pb-free lead plating ; rohs compliant
